 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NTE366 Silicon NPN Transistor RF Power Output PO = 25W @ 512MHz Description: The NTE366 is a silicon NPN transistor designed for 12.5 Volt UHF large-signal amplifier applications in industrial and commercial FM equipment operating to 512MHz. Features: D Specified 12.5 Volt, 470MHz Characteristic: Output Power = 25 Watts Minimum Gain = 6.2dB Efficiency = 60% D Characterized with Series Equivalent Large-Signal Impedance Parameters D Built-In Matching Network for Broadband Operation D Tested for Load Mismatch Stress at all Phase Angles with 20:1 VSWR @ 16-volt High Line and Overdrive Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector Current-Continuous, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103W Derate above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 590mW/C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.7C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO V(BR)CES Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)EBO ICES IC = 20mA, IB = 0 IC = 20mA, VBE = 0 IE = 5mA, IC = 0 VCE = 15V, VBE = 0, TC = +25C 16 36 4 - - - - - - - - 10 V V V mA Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter ON Characteristics DC Current Gain Dynamic Characteristics Output Capacitance Functional Test Common-Emitter Amplifier Power Gain Input Power Collector Efficiency Output Mismatch Stress Series Equivalent Input Impedance Series Equivalent Output Impedance GPE Pin Zin ZOL VCC = 16V, Pin = Note 1, f = 470MHz, VSWR = 20:1, All Phase Angles POUT = 25W, VCC = 12.5V, f = 470MHz POUT = 25W, VCC = 12.5V, ICmax = 3.6A, f = 470MHz POUT = 25W, VCC = 12.5V, f = 470MHz 6.2 - 55 7.0 5 60 - 6 - dB W % Cob VCB = 12.5V, IE = 0, f = 1MHz - 90 125 pF hFE VCE = 5V, IC = 4A 40 70 100 Symbol Test Conditions Min Typ Max Unit No Degradation in Output Power -1.2 + j3.3 - -1.9 + j2.1 - Note 1. Pin = 150% of Drive Requirement for 25W output @ 12.5V. Note 2. y = Mismatch stress factor - the electrical criterion established to verify the device resistance to load mismatch failure. The mismatch stress test is accomplished in a standard test fixture terminated in a 20:1 minimum load mismatch at all phase angles. .215 (5.48) .122 (3.1) Dia E .405 (10.3) Min B .205 (5.18) C E .155 (3.94) .500 (12.7) Dia .005 (0.15) .270 (6.85) .160 (4.06) .725 (18.43) .975 (24.78) |
Price & Availability of NTE366
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |